IXXH80N65B4D1 Details _IXXH80N65B4D1 Related parameters PDF

Transistors - IGBTs - Single

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Specifications

Description	Details
Series	XPT™, GenX4™
Package	Tube
IGBT Type	PT
Voltage - Collector Emitter Breakdown (Max)	650 V
Current - Collector (Ic) (Max)	180 A
Current - Collector Pulsed (Icm)	430 A
Vce(on) (Max) @ Vge, Ic	2.1V @ 15V, 80A
Power - Max	625 W
Switching Energy	3.36mJ (on), 1.83mJ (off)
Input Type	Standard
Gate Charge	120 nC
Td (on/off) @ 25°C	26ns/112ns
Test Condition	400V, 80A, 3Ohm, 15V
Reverse Recovery Time (trr)	100 ns
Operating Temperature	-55°C ~ 175°C (TJ)
Mounting Type	Through Hole
Package / Case	TO-247-3
Supplier Device Package	TO-247AD

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