IXYT85N120A4HV Details _IXYT85N120A4HV Related parameters PDF

Transistors - IGBTs - Single

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Specifications

Description	Details
Series	-
Package	Tube
IGBT Type	PT
Voltage - Collector Emitter Breakdown (Max)	1200 V
Current - Collector (Ic) (Max)	300 A
Current - Collector Pulsed (Icm)	520 A
Vce(on) (Max) @ Vge, Ic	1.8V @ 15V, 85A
Power - Max	1150 W
Switching Energy	4.9mJ (on), 8.3mJ (off)
Input Type	Standard
Gate Charge	200 nC
Td (on/off) @ 25°C	40ns/400ns
Test Condition	600V, 60A, 5Ohm, 15V
Reverse Recovery Time (trr)	40 ns
Operating Temperature	-55°C ~ 175°C (TJ)
Mounting Type	Surface Mount
Package / Case	TO-268-3, D³Pak (2 Leads + Tab), TO-268AA
Supplier Device Package	TO-268HV

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