| Description | Details |
|
Series
|
GigaMOS™, HiPerFET™, TrenchT2™
|
|
Package
|
Tube
|
|
FET Type
|
N-Channel
|
|
Technology
|
MOSFET (Metal Oxide)
|
|
Drain to Source Voltage (Vdss)
|
75 V
|
|
Current - Continuous Drain (Id) @ 25°C
|
230A (Tc)
|
|
Drive Voltage (Max Rds On, Min Rds On)
|
10V
|
|
Rds On (Max) @ Id, Vgs
|
4.2mOhm @ 50A, 10V
|
|
Vgs(th) (Max) @ Id
|
4V @ 1mA
|
|
Gate Charge (Qg) (Max) @ Vgs
|
178 nC @ 10 V
|
|
Vgs (Max)
|
-
|
|
Input Capacitance (Ciss) (Max) @ Vds
|
10500 pF @ 25 V
|
|
FET Feature
|
-
|
|
Power Dissipation (Max)
|
480W (Tc)
|
|
Operating Temperature
|
-55°C ~ 175°C (TJ)
|
|
Mounting Type
|
Surface Mount
|
|
Supplier Device Package
|
TO-263-7 (IXTA..7)
|
|
Package / Case
|
TO-263-7, D²Pak (6 Leads + Tab)
|