2SK2858-T1-A Details _2SK2858-T1-A Related parameters PDF_Renesas Electronics America Inc-IC-STK

MOSFETs - Single

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Specifications

Description	Details
Series	-
Package	Bulk
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	30 V
Current - Continuous Drain (Id) @ 25°C	100mA (Ta)
Drive Voltage (Max Rds On, Min Rds On)	-
Rds On (Max) @ Id, Vgs	5Ohm @ 10mA, 10V
Vgs(th) (Max) @ Id	1.8V @ 10µA
Gate Charge (Qg) (Max) @ Vgs	-
Vgs (Max)	-
Input Capacitance (Ciss) (Max) @ Vds	9 pF @ 3 V
FET Feature	-
Power Dissipation (Max)	-
Operating Temperature	-
Mounting Type	Surface Mount
Supplier Device Package	SC-70-3, SSP, Miniature Mini Mold
Package / Case	SC-70, SOT-323

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