FSS275-TL-E Details _FSS275-TL-E Related parameters PDF

MOSFETs - Single

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Specifications

Description	Details
Series	-
Package	Bulk
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	60 V
Current - Continuous Drain (Id) @ 25°C	6A (Ta)
Drive Voltage (Max Rds On, Min Rds On)	-
Rds On (Max) @ Id, Vgs	43mOhm @ 3A, 10V
Vgs(th) (Max) @ Id	-
Gate Charge (Qg) (Max) @ Vgs	21 nC @ 10 V
Vgs (Max)	-
Input Capacitance (Ciss) (Max) @ Vds	1.1 pF @ 20 V
FET Feature	-
Power Dissipation (Max)	1.9W (Ta)
Operating Temperature	150°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	8-SOP
Package / Case	8-SOIC (0.173", 4.40mm Width)

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