IGT60R070D1ATMA1 Details _IGT60R070D1ATMA1 Related parameters PDF

MOSFETs - Single

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Specifications

Description	Details
Series	CoolGaN™
Package	Tape & Reel (TR)Cut Tape (CT)Digi-Reel®
FET Type	N-Channel
Technology	GaNFET (Gallium Nitride)
Drain to Source Voltage (Vdss)	600 V
Current - Continuous Drain (Id) @ 25°C	31A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	-
Rds On (Max) @ Id, Vgs	-
Vgs(th) (Max) @ Id	1.6V @ 2.6mA
Gate Charge (Qg) (Max) @ Vgs	-
Vgs (Max)	-10V
Input Capacitance (Ciss) (Max) @ Vds	380 pF @ 400 V
FET Feature	-
Power Dissipation (Max)	125W (Tc)
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	PG-HSOF-8-3
Package / Case	8-PowerSFN

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