NTE464 Details _NTE464 Related parameters PDF

MOSFETs - Single

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Specifications

Description	Details
Series	-
Package	Bag
FET Type	P-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	25 V
Current - Continuous Drain (Id) @ 25°C	10A
Drive Voltage (Max Rds On, Min Rds On)	10V
Rds On (Max) @ Id, Vgs	600Ohm @ 0A, 10V
Vgs(th) (Max) @ Id	5V @ 10A
Gate Charge (Qg) (Max) @ Vgs	-
Vgs (Max)	±30V
Input Capacitance (Ciss) (Max) @ Vds	5 pF @ 10 V
FET Feature	Standard
Power Dissipation (Max)	800mW (Tc)
Operating Temperature	175°C (TJ)
Mounting Type	Through Hole
Supplier Device Package	TO-72
Package / Case	TO-72-3

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