IXKF40N60SCD1 Details _IXKF40N60SCD1 Related parameters PDF

MOSFETs - Single

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Specifications

Description	Details
Series	CoolMOS™
Package	Tube
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	600 V
Current - Continuous Drain (Id) @ 25°C	41A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	10V
Rds On (Max) @ Id, Vgs	70mOhm @ 25A, 10V
Vgs(th) (Max) @ Id	3.9V @ 3mA
Gate Charge (Qg) (Max) @ Vgs	250 nC @ 10 V
Vgs (Max)	±20V
Input Capacitance (Ciss) (Max) @ Vds	-
FET Feature	Super Junction
Power Dissipation (Max)	-
Operating Temperature	-40°C ~ 150°C (TJ)
Mounting Type	Through Hole
Supplier Device Package	ISOPLUS i4-PAC™
Package / Case	i4-Pac™-5 (3 Leads)

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