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Transistors - Bipolar - RF
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MS1006

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In Stock:19,250(Ref. price)
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Documents
Specifications
DescriptionDetails
Series
-
Package
Bulk
Transistor Type
NPN
Voltage - Collector Emitter Breakdown (Max)
55V
Frequency - Transition
30MHz
Noise Figure (dB Typ @ f)
-
Gain
14dB
Power - Max
127W
DC Current Gain (hFE) (Min) @ Ic, Vce
19 @ 1.4A, 6V
Current - Collector (Ic) (Max)
3.25A
Operating Temperature
200°C
Mounting Type
Stud Mount
Package / Case
M135
Supplier Device Package
M135
Other
Price advantage, MS1006 is available in stock and can be delivered on the same day
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