NTE319P Details _NTE319P Related parameters PDF

Transistors - Bipolar - RF

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Specifications

Description	Details
Series	-
Package	Bag
Transistor Type	NPN
Voltage - Collector Emitter Breakdown (Max)	20V
Frequency - Transition	500MHz
Noise Figure (dB Typ @ f)	2.7dB @ 45MHz
Gain	29dB
Power - Max	625mW
DC Current Gain (hFE) (Min) @ Ic, Vce	20 @ 2mA, 10V
Current - Collector (Ic) (Max)	50mA
Operating Temperature	150°C (TJ)
Mounting Type	Through Hole
Package / Case	TO-226-3, TO-92-3 (TO-226AA)
Supplier Device Package	TO-92

Other

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