IXSH20N60B2D1 Details _IXSH20N60B2D1 Related parameters PDF

Transistors - IGBTs - Single

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Specifications

Description	Details
Series	-
Package	Bulk
IGBT Type	PT
Voltage - Collector Emitter Breakdown (Max)	600 V
Current - Collector (Ic) (Max)	35 A
Current - Collector Pulsed (Icm)	60 A
Vce(on) (Max) @ Vge, Ic	2.5V @ 15V, 16A
Power - Max	190 W
Switching Energy	380µJ (off)
Input Type	Standard
Gate Charge	33 nC
Td (on/off) @ 25°C	30ns/116ns
Test Condition	480V, 16A, 10Ohm, 15V
Reverse Recovery Time (trr)	30 ns
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Through Hole
Package / Case	TO-247-3
Supplier Device Package	TO-247AD (IXSH)

Other

Price advantage, IXSH20N60B2D1 is available in stock and can be delivered on the same day

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