IXGH32N90B2D1 Details _IXGH32N90B2D1 Related parameters PDF

Transistors - IGBTs - Single

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Specifications

Description	Details
Series	HiPerFAST™
Package	Tube
IGBT Type	PT
Voltage - Collector Emitter Breakdown (Max)	900 V
Current - Collector (Ic) (Max)	64 A
Current - Collector Pulsed (Icm)	200 A
Vce(on) (Max) @ Vge, Ic	2.7V @ 15V, 32A
Power - Max	300 W
Switching Energy	2.2mJ (off)
Input Type	Standard
Gate Charge	89 nC
Td (on/off) @ 25°C	20ns/260ns
Test Condition	720V, 32A, 5Ohm, 15V
Reverse Recovery Time (trr)	190 ns
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Through Hole
Package / Case	TO-247-3
Supplier Device Package	TO-247AD (IXGH)

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