HGTG27N120BN Details _HGTG27N120BN Related parameters PDF

Transistors - IGBTs - Single

The picture is for reference only

Please fill in the inquiry information for purchasing and consulting products

PartName*	Quantity*	Batch Number	Package	Manufacturer	Other requirements

Please fill in the contact details and reply to you in 3 minutes

In Stock：709(Ref. price)

Qty.	Unit Price	Ext. Price
1	$6.63360	$6.63360

Qty：

Add inquiry Quick quote

Related products

Documents

Specifications

Description	Details
Series	-
Package	Tube
IGBT Type	NPT
Voltage - Collector Emitter Breakdown (Max)	1200 V
Current - Collector (Ic) (Max)	72 A
Current - Collector Pulsed (Icm)	216 A
Vce(on) (Max) @ Vge, Ic	2.7V @ 15V, 27A
Power - Max	500 W
Switching Energy	2.2mJ (on), 2.3mJ (off)
Input Type	Standard
Gate Charge	270 nC
Td (on/off) @ 25°C	24ns/195ns
Test Condition	960V, 27A, 3Ohm, 15V
Reverse Recovery Time (trr)	-
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Through Hole
Package / Case	TO-247-3
Supplier Device Package	TO-247-3

Other

Price advantage, HGTG27N120BN is available in stock and can be delivered on the same day

Recommended Product

Part No	Manufacturer	Product Category	Datasheet	Description	Reference price	Quantity
IKP40N65H5XKSA1	Infineon Technologies	Transistors - IGBTs - Single	Datasheet	IGBT 650V 74A 255W TO220-3	$3.37560	In Stock:2324
IXGB200N60B3	IXYS	Transistors - IGBTs - Single	Datasheet	IGBT 600V 75A 1250W PLUS264	No price	In Stock:19204
IXGQ28N120B	IXYS	Transistors - IGBTs - Single	Datasheet	IGBT 1200V 50A 250W TO3P	No price	In Stock:19206
IRGR4607DTRLPBF	Infineon Technologies	Transistors - IGBTs - Single	Datasheet	IGBT 600V 11A 58W DPAK	No price	In Stock:19208
SGF23N60UFTU	Fairchild Semiconductor	Transistors - IGBTs - Single	Datasheet	INSULATED GATE BIPOLAR TRANSISTO	$1.28380	In Stock:166130