VS-GT200TP065N Details _VS-GT200TP065N Related parameters PDF_Vishay General Semiconductor

Transistors - IGBTs - Modules

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Specifications

Description	Details
Series	-
Package	Tube
IGBT Type	Trench
Configuration	Half Bridge
Voltage - Collector Emitter Breakdown (Max)	650 V
Current - Collector (Ic) (Max)	221 A
Power - Max	600 W
Vce(on) (Max) @ Vge, Ic	2.12V @ 15V, 200A
Current - Collector Cutoff (Max)	60 µA
Input Capacitance (Cies) @ Vce	-
Input	Standard
NTC Thermistor	No
Operating Temperature	-40°C ~ 175°C (TJ)
Mounting Type	Chassis Mount
Package / Case	INT-A-Pak
Supplier Device Package	INT-A-PAK

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