QID1210006 Details _QID1210006 Related parameters PDF

Transistors - IGBTs - Modules

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Specifications

Description	Details
Series	-
Package	Bulk
IGBT Type	-
Configuration	2 Independent
Voltage - Collector Emitter Breakdown (Max)	1200 V
Current - Collector (Ic) (Max)	100 A
Power - Max	570 W
Vce(on) (Max) @ Vge, Ic	6.5V @ 15V, 100A
Current - Collector Cutoff (Max)	1 mA
Input Capacitance (Cies) @ Vce	16 nF @ 10 V
Input	Standard
NTC Thermistor	No
Operating Temperature	-40°C ~ 150°C (TJ)
Mounting Type	-
Package / Case	-
Supplier Device Package	-

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