VS-GT100TP60N Details _VS-GT100TP60N Related parameters PDF_Vishay General Semiconductor

Transistors - IGBTs - Modules

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Specifications

Description	Details
Series	-
Package	Bulk
IGBT Type	Trench
Configuration	Half Bridge
Voltage - Collector Emitter Breakdown (Max)	600 V
Current - Collector (Ic) (Max)	160 A
Power - Max	417 W
Vce(on) (Max) @ Vge, Ic	2.1V @ 15V, 100A
Current - Collector Cutoff (Max)	5 mA
Input Capacitance (Cies) @ Vce	7.71 nF @ 30 V
Input	Standard
NTC Thermistor	No
Operating Temperature	175°C (TJ)
Mounting Type	Chassis Mount
Package / Case	INT-A-PAK (3 + 4)
Supplier Device Package	INT-A-PAK

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