FF450R07ME4B11BOSA1 Details _FF450R07ME4B11BOSA1 Related parameters PDF

Transistors - IGBTs - Modules

The picture is for reference only

Please fill in the inquiry information for purchasing and consulting products

PartName*	Quantity*	Batch Number	Package	Manufacturer	Other requirements

Please fill in the contact details and reply to you in 3 minutes

In Stock：4,010(Ref. price)

Qty.	Unit Price	Ext. Price
1	$156.87541	$156.87541

Qty：

Add inquiry Quick quote

Related products

Documents

Specifications

Description	Details
Series	-
Package	Bulk
IGBT Type	Trench Field Stop
Configuration	2 Independent
Voltage - Collector Emitter Breakdown (Max)	650 V
Current - Collector (Ic) (Max)	560 A
Power - Max	1450 W
Vce(on) (Max) @ Vge, Ic	1.95V @ 15V, 450A
Current - Collector Cutoff (Max)	1 mA
Input Capacitance (Cies) @ Vce	27.5 nF @ 25 V
Input	Standard
NTC Thermistor	Yes
Operating Temperature	-40°C ~ 150°C
Mounting Type	Chassis Mount
Package / Case	Module
Supplier Device Package	Module

Other

Price advantage, FF450R07ME4B11BOSA1 is available in stock and can be delivered on the same day

Recommended Product

Part No	Manufacturer	Product Category	Datasheet	Description	Reference price	Quantity
FF800R17KP4B2NOSA2	Infineon Technologies	Transistors - IGBTs - Modules	Datasheet	IGBT MODULE 1700V 800A	$1281.31174	In Stock:17636
APTGF15H120T1G	Microsemi Corporation	Transistors - IGBTs - Modules	Datasheet	IGBT MODULE 1200V 25A 140W SP1	No price	In Stock:17638
APTGT100TDU60PG	Microchip Technology	Transistors - IGBTs - Modules	Datasheet	IGBT MODULE 600V 150A 340W SP6P	$149.09401	In Stock:17640
FF600R12ME4CBOSA1	Infineon Technologies	Transistors - IGBTs - Modules	Datasheet	IGBT MOD 1200V 1060A 4050W	$278.96640	In Stock:784
VS-GB200NH120N	Vishay General Semiconductor - Diodes Division	Transistors - IGBTs - Modules	Datasheet	IGBT MOD 1200V 420A INT-A-PAK	No price	In Stock:17646