VS-GB50YF120N Details _VS-GB50YF120N Related parameters PDF_Vishay General Semiconductor

Transistors - IGBTs - Modules

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Specifications

Description	Details
Series	-
Package	Bulk
IGBT Type	-
Configuration	-
Voltage - Collector Emitter Breakdown (Max)	1200 V
Current - Collector (Ic) (Max)	66 A
Power - Max	330 W
Vce(on) (Max) @ Vge, Ic	4.5V @ 15V, 75A
Current - Collector Cutoff (Max)	250 µA
Input Capacitance (Cies) @ Vce	-
Input	Standard
NTC Thermistor	No
Operating Temperature	150°C (TJ)
Mounting Type	Chassis Mount
Package / Case	Module
Supplier Device Package	ECONO2 4PACK

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