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FDC2612_F095 Picture

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FDC2612_F095

  • ON Semiconductor
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  • MOSFET N-CH 200V 1.1A SUPERSOT6
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In Stock:20,776(Ref. price)
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Documents
Specifications
DescriptionDetails
Series
PowerTrench®
Package
Tape & Reel (TR)
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
200 V
Current - Continuous Drain (Id) @ 25°C
1.1A (Ta)
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
725mOhm @ 1.1A, 10V
Vgs(th) (Max) @ Id
4.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
11 nC @ 10 V
Vgs (Max)
±20V
Input Capacitance (Ciss) (Max) @ Vds
234 pF @ 100 V
FET Feature
-
Power Dissipation (Max)
1.6W (Ta)
Operating Temperature
-55°C ~ 150°C (TJ)
Mounting Type
Surface Mount
Supplier Device Package
SuperSOT™-6
Package / Case
SOT-23-6 Thin, TSOT-23-6
Other
Price advantage, FDC2612_F095 is available in stock and can be delivered on the same day
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