TP65H035G4WS Details _TP65H035G4WS Related parameters PDF

MOSFETs - Single

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Specifications

Description	Details
Series	-
Package	Tube
FET Type	N-Channel
Technology	GaNFET (Cascode Gallium Nitride FET)
Drain to Source Voltage (Vdss)	650 V
Current - Continuous Drain (Id) @ 25°C	46.5A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	10V
Rds On (Max) @ Id, Vgs	41mOhm @ 30A, 10V
Vgs(th) (Max) @ Id	4.8V @ 1mA
Gate Charge (Qg) (Max) @ Vgs	22 nC @ 0 V
Vgs (Max)	±20V
Input Capacitance (Ciss) (Max) @ Vds	1500 pF @ 400 V
FET Feature	-
Power Dissipation (Max)	156W (Tc)
Operating Temperature	-55°C ~ 150°C
Mounting Type	Through Hole
Supplier Device Package	TO-247-3
Package / Case	TO-247-3

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