IRLHS6342TRPBF Details _IRLHS6342TRPBF Related parameters PDF

MOSFETs - Single

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Specifications

Description	Details
Series	HEXFET®
Package	Tape & Reel (TR)Cut Tape (CT)Digi-Reel®
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	30 V
Current - Continuous Drain (Id) @ 25°C	8.7A (Ta), 19A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	2.5V, 4.5V
Rds On (Max) @ Id, Vgs	15.5mOhm @ 8.5A, 4.5V
Vgs(th) (Max) @ Id	1.1V @ 10µA
Gate Charge (Qg) (Max) @ Vgs	11 nC @ 4.5 V
Vgs (Max)	±12V
Input Capacitance (Ciss) (Max) @ Vds	1019 pF @ 25 V
FET Feature	-
Power Dissipation (Max)	2.1W (Ta)
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	6-PQFN (2x2)
Package / Case	6-PowerVDFN

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