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IRL3103LPBF Picture

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IRL3103LPBF

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In Stock:19,894(Ref. price)
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Documents
Specifications
DescriptionDetails
Series
HEXFET®
Package
Tube
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
30 V
Current - Continuous Drain (Id) @ 25°C
64A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
4.5V, 10V
Rds On (Max) @ Id, Vgs
12mOhm @ 34A, 10V
Vgs(th) (Max) @ Id
1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
33 nC @ 4.5 V
Vgs (Max)
±16V
Input Capacitance (Ciss) (Max) @ Vds
1650 pF @ 25 V
FET Feature
-
Power Dissipation (Max)
94W (Tc)
Operating Temperature
-55°C ~ 175°C (TJ)
Mounting Type
Through Hole
Supplier Device Package
TO-262
Package / Case
TO-262-3 Long Leads, I²Pak, TO-262AA
Other
Price advantage, IRL3103LPBF is available in stock and can be delivered on the same day
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