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TPS1100DR Picture

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TPS1100DR

  • Texas Instruments
  • New
  • MOSFET P-CH 15V 1.6A 8SOIC
  • Datasheet download
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In Stock:2,784(Ref. price)
Qty.Unit PriceExt. Price
1
$0.64600
$0.64600
Documents
Specifications
DescriptionDetails
Series
-
Package
Bulk
FET Type
P-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
15 V
Current - Continuous Drain (Id) @ 25°C
1.6A (Ta)
Drive Voltage (Max Rds On, Min Rds On)
2.7V, 10V
Rds On (Max) @ Id, Vgs
180mOhm @ 1.5A, 10V
Vgs(th) (Max) @ Id
1.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
5.45 nC @ 10 V
Vgs (Max)
+2V, -15V
Input Capacitance (Ciss) (Max) @ Vds
-
FET Feature
-
Power Dissipation (Max)
791mW (Ta)
Operating Temperature
-40°C ~ 150°C (TJ)
Mounting Type
Surface Mount
Supplier Device Package
8-SOIC
Package / Case
8-SOIC (0.154", 3.90mm Width)
Other
Price advantage, TPS1100DR is available in stock and can be delivered on the same day
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