SSM3J372R,LXHF Details _SSM3J372R,LXHF Related parameters PDF_Toshiba Semiconductor and Storage-IC-STK

MOSFETs - Single

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Specifications

Description	Details
Series	Automotive, AEC-Q101, U-MOSVI
Package	Tape & Reel (TR)Cut Tape (CT)
FET Type	P-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	30 V
Current - Continuous Drain (Id) @ 25°C	6A (Ta)
Drive Voltage (Max Rds On, Min Rds On)	1.8V, 10V
Rds On (Max) @ Id, Vgs	42mOhm @ 5A, 10V
Vgs(th) (Max) @ Id	1.2V @ 1mA
Gate Charge (Qg) (Max) @ Vgs	8.2 nC @ 4.5 V
Vgs (Max)	+6V, -12V
Input Capacitance (Ciss) (Max) @ Vds	560 pF @ 15 V
FET Feature	-
Power Dissipation (Max)	1W (Ta)
Operating Temperature	150°C
Mounting Type	Surface Mount
Supplier Device Package	SOT-23F
Package / Case	SOT-23-3 Flat Leads

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