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RCD100N19TL Picture

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RCD100N19TL

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In Stock:1,469(Ref. price)
Qty.Unit PriceExt. Price
1
$1.14000
$1.14000
Documents
Specifications
DescriptionDetails
Series
-
Package
Tape & Reel (TR)Cut Tape (CT)Digi-Reel®
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
190 V
Current - Continuous Drain (Id) @ 25°C
10A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
4V, 10V
Rds On (Max) @ Id, Vgs
182mOhm @ 5A, 10V
Vgs(th) (Max) @ Id
2.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs
52 nC @ 10 V
Vgs (Max)
±20V
Input Capacitance (Ciss) (Max) @ Vds
2000 pF @ 25 V
FET Feature
-
Power Dissipation (Max)
850mW (Ta), 20W (Tc)
Operating Temperature
150°C (TJ)
Mounting Type
Surface Mount
Supplier Device Package
CPT3
Package / Case
TO-252-3, DPak (2 Leads + Tab), SC-63
Other
Price advantage, RCD100N19TL is available in stock and can be delivered on the same day
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