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G3R75MT12D Picture

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G3R75MT12D

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In Stock:2,238(Ref. price)
Qty.Unit PriceExt. Price
1
$10.25290
$10.25290
Documents
Specifications
DescriptionDetails
Series
G3R™
Package
Tube
FET Type
N-Channel
Technology
SiCFET (Silicon Carbide)
Drain to Source Voltage (Vdss)
1200 V
Current - Continuous Drain (Id) @ 25°C
41A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
15V
Rds On (Max) @ Id, Vgs
90mOhm @ 20A, 15V
Vgs(th) (Max) @ Id
2.69V @ 7.5mA
Gate Charge (Qg) (Max) @ Vgs
54 nC @ 15 V
Vgs (Max)
±15V
Input Capacitance (Ciss) (Max) @ Vds
1560 pF @ 800 V
FET Feature
-
Power Dissipation (Max)
207W (Tc)
Operating Temperature
-55°C ~ 175°C (TJ)
Mounting Type
Through Hole
Supplier Device Package
TO-247-3
Package / Case
TO-247-3
Other
Price advantage, G3R75MT12D is available in stock and can be delivered on the same day
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