IRL7472L1TRPBF Details _IRL7472L1TRPBF Related parameters PDF

MOSFETs - Single

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Specifications

Description	Details
Series	StrongIRFET™
Package	Bulk
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	40 V
Current - Continuous Drain (Id) @ 25°C	375A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	4.5V, 10V
Rds On (Max) @ Id, Vgs	0.59mOhm @ 195A, 10V
Vgs(th) (Max) @ Id	2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	330 nC @ 4.5 V
Vgs (Max)	±20V
Input Capacitance (Ciss) (Max) @ Vds	20.082 pF @ 25 V
FET Feature	-
Power Dissipation (Max)	3.8W (Ta), 341W (Tc)
Operating Temperature	-55°C ~ 175°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	DIRECTFET L8
Package / Case	DirectFET™ Isometric L8

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