FQNL1N50BBU Details _FQNL1N50BBU Related parameters PDF

MOSFETs - Single

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Specifications

Description	Details
Series	QFET®
Package	Bulk
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	500 V
Current - Continuous Drain (Id) @ 25°C	270mA (Tc)
Drive Voltage (Max Rds On, Min Rds On)	10V
Rds On (Max) @ Id, Vgs	9Ohm @ 135mA, 10V
Vgs(th) (Max) @ Id	3.7V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	5.5 nC @ 10 V
Vgs (Max)	±30V
Input Capacitance (Ciss) (Max) @ Vds	150 pF @ 25 V
FET Feature	-
Power Dissipation (Max)	1.5W (Tc)
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Through Hole
Supplier Device Package	TO-92-3
Package / Case	TO-226-3, TO-92-3 Long Body (Formed Leads)

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