TP65H070LSG Details _TP65H070LSG Related parameters PDF

MOSFETs - Single

The picture is for reference only

Please fill in the inquiry information for purchasing and consulting products

PartName*	Quantity*	Batch Number	Package	Manufacturer	Other requirements

Please fill in the contact details and reply to you in 3 minutes

In Stock：17,146(Ref. price)

Qty.	Unit Price	Ext. Price
No price, please contact inquiry

Qty：

Add inquiry Quick quote

Related products

Documents

Specifications

Description	Details
Series	TP65H070L
Package	Tube
FET Type	N-Channel
Technology	GaNFET (Cascode Gallium Nitride FET)
Drain to Source Voltage (Vdss)	650 V
Current - Continuous Drain (Id) @ 25°C	25A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	10V
Rds On (Max) @ Id, Vgs	85mOhm @ 16A, 10V
Vgs(th) (Max) @ Id	4.8V @ 700µA
Gate Charge (Qg) (Max) @ Vgs	9.3 nC @ 10 V
Vgs (Max)	±20V
Input Capacitance (Ciss) (Max) @ Vds	600 pF @ 400 V
FET Feature	-
Power Dissipation (Max)	96W (Tc)
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	3-PQFN (8x8)
Package / Case	3-PowerDFN

Other

Price advantage, TP65H070LSG is available in stock and can be delivered on the same day

Recommended Product

Part No	Manufacturer	Product Category	Datasheet	Description	Reference price	Quantity
IRFU1018EPBF	International Rectifier	MOSFETs - Single	Datasheet	MOSFET N-CH 60V 56A IPAK	$0.49980	In Stock:19530
IRFC4568EB	Infineon Technologies	MOSFETs - Single	Datasheet	MOSFET N-CH 150V 171A DIE	No price	In Stock:19532
APT5017BVFRG	Microchip Technology	MOSFETs - Single	Datasheet	MOSFET N-CH 500V 30A TO247	$9.86490	In Stock:19534
IPW60R280E6FKSA1	Infineon Technologies	MOSFETs - Single	Datasheet	MOSFET N-CH 600V 13.8A TO247-3	$2.28926	In Stock:19536
TK3R1P04PL,RQ	Toshiba Semiconductor and Storage	MOSFETs - Single	Datasheet	MOSFET N-CHANNEL 40V 58A DPAK	$1.04500	In Stock:6415