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SI6463BDQ-T1-GE3 Picture

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SI6463BDQ-T1-GE3

  • Vishay Siliconix
  • New
  • MOSFET P-CH 20V 6.2A 8-TSSOP
  • Datasheet download
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In Stock:19,790(Ref. price)
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Documents
Specifications
DescriptionDetails
Series
TrenchFET®
Package
Tape & Reel (TR)Cut Tape (CT)Digi-Reel®
FET Type
P-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
20 V
Current - Continuous Drain (Id) @ 25°C
6.2A (Ta)
Drive Voltage (Max Rds On, Min Rds On)
-
Rds On (Max) @ Id, Vgs
15mOhm @ 7.4A, 4.5V
Vgs(th) (Max) @ Id
800mV @ 250µA
Gate Charge (Qg) (Max) @ Vgs
60 nC @ 5 V
Vgs (Max)
-
Input Capacitance (Ciss) (Max) @ Vds
-
FET Feature
-
Power Dissipation (Max)
-
Operating Temperature
-
Mounting Type
Surface Mount
Supplier Device Package
8-TSSOP
Package / Case
8-TSSOP (0.173", 4.40mm Width)
Other
Price advantage, SI6463BDQ-T1-GE3 is available in stock and can be delivered on the same day
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