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MOSFETs - Single
FQA28N15_F109 Picture

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FQA28N15_F109

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In Stock:17,752(Ref. price)
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Documents
Specifications
DescriptionDetails
Series
QFET®
Package
Tube
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
150 V
Current - Continuous Drain (Id) @ 25°C
33A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
90mOhm @ 16.5A, 10V
Vgs(th) (Max) @ Id
4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
52 nC @ 10 V
Vgs (Max)
±25V
Input Capacitance (Ciss) (Max) @ Vds
1600 pF @ 25 V
FET Feature
-
Power Dissipation (Max)
227W (Tc)
Operating Temperature
-55°C ~ 175°C (TJ)
Mounting Type
Through Hole
Supplier Device Package
TO-3PN
Package / Case
TO-3P-3, SC-65-3
Other
Price advantage, FQA28N15_F109 is available in stock and can be delivered on the same day
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