SSM3K361R,LXHF Details _SSM3K361R,LXHF Related parameters PDF_Toshiba Semiconductor and Storage-IC-STK

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Specifications

Description	Details
Series	Automotive, AEC-Q101, U-MOSVIII-H
Package	Tape & Reel (TR)Cut Tape (CT)
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	100 V
Current - Continuous Drain (Id) @ 25°C	3.5A (Ta)
Drive Voltage (Max Rds On, Min Rds On)	4.5V, 10V
Rds On (Max) @ Id, Vgs	69mOhm @ 2A, 10V
Vgs(th) (Max) @ Id	2.5V @ 100µA
Gate Charge (Qg) (Max) @ Vgs	3.2 nC @ 4.5 V
Vgs (Max)	±20V
Input Capacitance (Ciss) (Max) @ Vds	430 pF @ 15 V
FET Feature	-
Power Dissipation (Max)	1.2W (Ta)
Operating Temperature	175°C
Mounting Type	Surface Mount
Supplier Device Package	SOT-23F
Package / Case	SOT-23-3 Flat Leads

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