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MOSFETs - Single
NVMS10P02R2G Picture

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NVMS10P02R2G

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In Stock:4,926(Ref. price)
Qty.Unit PriceExt. Price
1
$0.67320
$0.67320
Documents
Specifications
DescriptionDetails
Series
-
Package
Bulk
FET Type
P-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
20 V
Current - Continuous Drain (Id) @ 25°C
10A (Ta)
Drive Voltage (Max Rds On, Min Rds On)
-
Rds On (Max) @ Id, Vgs
-
Vgs(th) (Max) @ Id
-
Gate Charge (Qg) (Max) @ Vgs
-
Vgs (Max)
-
Input Capacitance (Ciss) (Max) @ Vds
-
FET Feature
-
Power Dissipation (Max)
-
Operating Temperature
-
Mounting Type
Surface Mount
Supplier Device Package
8-SOIC
Package / Case
8-SOIC (0.154", 3.90mm Width)
Other
Price advantage, NVMS10P02R2G is available in stock and can be delivered on the same day
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