LSIC1MO170E1000 Details _LSIC1MO170E1000 Related parameters PDF

MOSFETs - Single

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Specifications

Description	Details
Series	-
Package	Tube
FET Type	N-Channel
Technology	SiCFET (Silicon Carbide)
Drain to Source Voltage (Vdss)	1700 V
Current - Continuous Drain (Id) @ 25°C	5A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	15V, 20V
Rds On (Max) @ Id, Vgs	1Ohm @ 2A, 20V
Vgs(th) (Max) @ Id	4V @ 1mA
Gate Charge (Qg) (Max) @ Vgs	15 nC @ 20 V
Vgs (Max)	+22V, -6V
Input Capacitance (Ciss) (Max) @ Vds	200 pF @ 1000 V
FET Feature	-
Power Dissipation (Max)	54W (Tc)
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Through Hole
Supplier Device Package	TO-247-3L
Package / Case	TO-247-3

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