PMT200EPEAX Details _PMT200EPEAX Related parameters PDF

MOSFETs - Single

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Specifications

Description	Details
Series	Automotive, AEC-Q101
Package	Bulk
FET Type	P-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	70 V
Current - Continuous Drain (Id) @ 25°C	2.4A (Ta)
Drive Voltage (Max Rds On, Min Rds On)	4.5V, 10V
Rds On (Max) @ Id, Vgs	167mOhm @ 2.4A, 10V
Vgs(th) (Max) @ Id	3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	15.9 nC @ 10 V
Vgs (Max)	±20V
Input Capacitance (Ciss) (Max) @ Vds	822 pF @ 35 V
FET Feature	-
Power Dissipation (Max)	800mW (Ta)
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	SOT-223
Package / Case	TO-261-4, TO-261AA

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