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3LN01C-TB-E Picture

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3LN01C-TB-E

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  • MOSFET N-CH 30V 150MA 3CP
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Documents
Specifications
DescriptionDetails
Series
-
Package
Tape & Reel (TR)Cut Tape (CT)Digi-Reel®
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
30 V
Current - Continuous Drain (Id) @ 25°C
150mA (Ta)
Drive Voltage (Max Rds On, Min Rds On)
1.5V, 4V
Rds On (Max) @ Id, Vgs
3.7Ohm @ 80mA, 4V
Vgs(th) (Max) @ Id
-
Gate Charge (Qg) (Max) @ Vgs
1.58 nC @ 10 V
Vgs (Max)
±10V
Input Capacitance (Ciss) (Max) @ Vds
7 pF @ 10 V
FET Feature
-
Power Dissipation (Max)
250mW (Ta)
Operating Temperature
150°C (TJ)
Mounting Type
Surface Mount
Supplier Device Package
3-CP
Package / Case
TO-236-3, SC-59, SOT-23-3
Other
Price advantage, 3LN01C-TB-E is available in stock and can be delivered on the same day
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