| Description | Details |
|
Series
|
QFET®
|
|
Package
|
Cut Tape (CT)Tape & Box (TB)
|
|
FET Type
|
N-Channel
|
|
Technology
|
MOSFET (Metal Oxide)
|
|
Drain to Source Voltage (Vdss)
|
500 V
|
|
Current - Continuous Drain (Id) @ 25°C
|
380mA (Tc)
|
|
Drive Voltage (Max Rds On, Min Rds On)
|
10V
|
|
Rds On (Max) @ Id, Vgs
|
6Ohm @ 190mA, 10V
|
|
Vgs(th) (Max) @ Id
|
4V @ 250µA
|
|
Gate Charge (Qg) (Max) @ Vgs
|
6.4 nC @ 10 V
|
|
Vgs (Max)
|
±30V
|
|
Input Capacitance (Ciss) (Max) @ Vds
|
195 pF @ 25 V
|
|
FET Feature
|
-
|
|
Power Dissipation (Max)
|
890mW (Ta), 2.08W (Tc)
|
|
Operating Temperature
|
-55°C ~ 150°C (TJ)
|
|
Mounting Type
|
Through Hole
|
|
Supplier Device Package
|
TO-92-3
|
|
Package / Case
|
TO-226-3, TO-92-3 (TO-226AA) Formed Leads
|