IRFF9213 Details _IRFF9213 Related parameters PDF

MOSFETs - Single

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Specifications

Description	Details
Series	HEXFET®
Package	Bulk
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	150 V
Current - Continuous Drain (Id) @ 25°C	1.3A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	-
Rds On (Max) @ Id, Vgs	-
Vgs(th) (Max) @ Id	-
Gate Charge (Qg) (Max) @ Vgs	-
Vgs (Max)	-
Input Capacitance (Ciss) (Max) @ Vds	-
FET Feature	-
Power Dissipation (Max)	15W
Operating Temperature	-
Mounting Type	Through Hole
Supplier Device Package	TO-205AF (TO-39)
Package / Case	TO-205AF Metal Can

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