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SQ2319ES-T1-GE3 Picture

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SQ2319ES-T1-GE3

  • Vishay Siliconix
  • New
  • MOSFET P-CH 40V 4.6A TO-236
  • Datasheet download
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In Stock:20,898(Ref. price)
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Documents
Specifications
DescriptionDetails
Series
*
Package
Tape & Reel (TR)Cut Tape (CT)Digi-Reel®
FET Type
P-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
40 V
Current - Continuous Drain (Id) @ 25°C
4.6A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
-
Rds On (Max) @ Id, Vgs
75mOhm @ 3A, 10V
Vgs(th) (Max) @ Id
2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
16 nC @ 10 V
Vgs (Max)
-
Input Capacitance (Ciss) (Max) @ Vds
620 pF @ 25 V
FET Feature
-
Power Dissipation (Max)
-
Operating Temperature
-
Mounting Type
Surface Mount
Supplier Device Package
SOT-23-3 (TO-236)
Package / Case
TO-236-3, SC-59, SOT-23-3
Other
Price advantage, SQ2319ES-T1-GE3 is available in stock and can be delivered on the same day
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