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SCT3022ALGC11 Picture

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SCT3022ALGC11

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In Stock:4,699(Ref. price)
Qty.Unit PriceExt. Price
1
$45.34460
$45.34460
Documents
Specifications
DescriptionDetails
Series
-
Package
Tube
FET Type
N-Channel
Technology
SiCFET (Silicon Carbide)
Drain to Source Voltage (Vdss)
650 V
Current - Continuous Drain (Id) @ 25°C
93A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
18V
Rds On (Max) @ Id, Vgs
28.6mOhm @ 36A, 18V
Vgs(th) (Max) @ Id
5.6V @ 18.2mA
Gate Charge (Qg) (Max) @ Vgs
133 nC @ 18 V
Vgs (Max)
+22V, -4V
Input Capacitance (Ciss) (Max) @ Vds
2208 pF @ 500 V
FET Feature
-
Power Dissipation (Max)
339W (Tc)
Operating Temperature
175°C (TJ)
Mounting Type
Through Hole
Supplier Device Package
TO-247N
Package / Case
TO-247-3
Other
Price advantage, SCT3022ALGC11 is available in stock and can be delivered on the same day
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