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MOSFETs - Single
IRLR7811WCPBF Picture

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IRLR7811WCPBF

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In Stock:19,930(Ref. price)
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Documents
Specifications
DescriptionDetails
Series
HEXFET®
Package
Tube
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
30 V
Current - Continuous Drain (Id) @ 25°C
64A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
4.5V, 10V
Rds On (Max) @ Id, Vgs
10.5mOhm @ 15A, 10V
Vgs(th) (Max) @ Id
2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
31 nC @ 4.5 V
Vgs (Max)
±12V
Input Capacitance (Ciss) (Max) @ Vds
2260 pF @ 15 V
FET Feature
-
Power Dissipation (Max)
71W (Tc)
Operating Temperature
-55°C ~ 175°C (TJ)
Mounting Type
Surface Mount
Supplier Device Package
D-Pak
Package / Case
TO-252-3, DPak (2 Leads + Tab), SC-63
Other
Price advantage, IRLR7811WCPBF is available in stock and can be delivered on the same day
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