SSM3J108TU(TE85L) Details _SSM3J108TU(TE85L) Related parameters PDF

MOSFETs - Single

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Specifications

Description	Details
Series	U-MOSIII
Package	Tape & Reel (TR)
FET Type	P-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	20 V
Current - Continuous Drain (Id) @ 25°C	1.8A (Ta)
Drive Voltage (Max Rds On, Min Rds On)	1.8V, 4V
Rds On (Max) @ Id, Vgs	158mOhm @ 800mA, 4V
Vgs(th) (Max) @ Id	1V @ 1mA
Gate Charge (Qg) (Max) @ Vgs	-
Vgs (Max)	±8V
Input Capacitance (Ciss) (Max) @ Vds	250 pF @ 10 V
FET Feature	-
Power Dissipation (Max)	500mW (Ta)
Operating Temperature	150°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	UFM
Package / Case	3-SMD, Flat Lead

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