NDBA100N10BT4H Details _NDBA100N10BT4H Related parameters PDF

MOSFETs - Single

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Specifications

Description	Details
Series	-
Package	Bulk
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	100 V
Current - Continuous Drain (Id) @ 25°C	100A (Ta)
Drive Voltage (Max Rds On, Min Rds On)	10V, 15V
Rds On (Max) @ Id, Vgs	6.9mOhm @ 50A, 15V
Vgs(th) (Max) @ Id	4V @ 1mA
Gate Charge (Qg) (Max) @ Vgs	35 nC @ 10 V
Vgs (Max)	±20V
Input Capacitance (Ciss) (Max) @ Vds	2.95 pF @ 50 V
FET Feature	-
Power Dissipation (Max)	110W (Tc)
Operating Temperature	175°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	D²PAK (TO-263)
Package / Case	TO-263-3, D²Pak (2 Leads + Tab), TO-263AB

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