SCT3017ALHRC11 Details _SCT3017ALHRC11 Related parameters PDF

MOSFETs - Single

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Specifications

Description	Details
Series	Automotive, AEC-Q101
Package	Tube
FET Type	N-Channel
Technology	SiCFET (Silicon Carbide)
Drain to Source Voltage (Vdss)	650 V
Current - Continuous Drain (Id) @ 25°C	118A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	18V
Rds On (Max) @ Id, Vgs	22.1mOhm @ 47A, 18V
Vgs(th) (Max) @ Id	5.6V @ 23.5mA
Gate Charge (Qg) (Max) @ Vgs	172 nC @ 18 V
Vgs (Max)	+22V, -4V
Input Capacitance (Ciss) (Max) @ Vds	2884 pF @ 500 V
FET Feature	-
Power Dissipation (Max)	427W
Operating Temperature	175°C (TJ)
Mounting Type	Through Hole
Supplier Device Package	TO-247N
Package / Case	TO-247-3

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