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MOSFETs - Single
IXTH2N170D2 Picture

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IXTH2N170D2

  • IXYS
  • New
  • MOSFET N-CH 1700V 2A TO247
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In Stock:1,352(Ref. price)
Qty.Unit PriceExt. Price
1
$15.27360
$15.27360
Documents
Specifications
DescriptionDetails
Series
-
Package
Tube
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
1700 V
Current - Continuous Drain (Id) @ 25°C
2A (Tj)
Drive Voltage (Max Rds On, Min Rds On)
0V
Rds On (Max) @ Id, Vgs
6.5Ohm @ 1A, 0V
Vgs(th) (Max) @ Id
-
Gate Charge (Qg) (Max) @ Vgs
110 nC @ 5 V
Vgs (Max)
±20V
Input Capacitance (Ciss) (Max) @ Vds
3650 pF @ 10 V
FET Feature
Depletion Mode
Power Dissipation (Max)
568W (Tc)
Operating Temperature
-55°C ~ 150°C (TJ)
Mounting Type
Through Hole
Supplier Device Package
TO-247 (IXTH)
Package / Case
TO-247-3
Other
Price advantage, IXTH2N170D2 is available in stock and can be delivered on the same day
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