| Description | Details |
|
Series
|
FETKY™
|
|
Package
|
Tube
|
|
FET Type
|
N-Channel
|
|
Technology
|
MOSFET (Metal Oxide)
|
|
Drain to Source Voltage (Vdss)
|
30 V
|
|
Current - Continuous Drain (Id) @ 25°C
|
6.5A (Ta)
|
|
Drive Voltage (Max Rds On, Min Rds On)
|
4.5V, 10V
|
|
Rds On (Max) @ Id, Vgs
|
32mOhm @ 5.8A, 10V
|
|
Vgs(th) (Max) @ Id
|
1V @ 250µA
|
|
Gate Charge (Qg) (Max) @ Vgs
|
33 nC @ 10 V
|
|
Vgs (Max)
|
±20V
|
|
Input Capacitance (Ciss) (Max) @ Vds
|
650 pF @ 25 V
|
|
FET Feature
|
Schottky Diode (Isolated)
|
|
Power Dissipation (Max)
|
2W (Ta)
|
|
Operating Temperature
|
-55°C ~ 150°C (TJ)
|
|
Mounting Type
|
Surface Mount
|
|
Supplier Device Package
|
8-SO
|
|
Package / Case
|
8-SOIC (0.154", 3.90mm Width)
|