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TP65H300G4LSG Picture

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TP65H300G4LSG

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  • GANFET N-CH 650V 6.5A 3PQFN
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In Stock:1,689(Ref. price)
Qty.Unit PriceExt. Price
1
$3.89940
$3.89940
Documents
Specifications
DescriptionDetails
Series
-
Package
Tray
FET Type
N-Channel
Technology
GaNFET (Gallium Nitride)
Drain to Source Voltage (Vdss)
650 V
Current - Continuous Drain (Id) @ 25°C
6.5A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
8V
Rds On (Max) @ Id, Vgs
312mOhm @ 5A, 8V
Vgs(th) (Max) @ Id
2.6V @ 500µA
Gate Charge (Qg) (Max) @ Vgs
9.6 nC @ 8 V
Vgs (Max)
±18V
Input Capacitance (Ciss) (Max) @ Vds
760 pF @ 400 V
FET Feature
-
Power Dissipation (Max)
21W (Tc)
Operating Temperature
-55°C ~ 150°C (TJ)
Mounting Type
Surface Mount
Supplier Device Package
3-PQFN (8x8)
Package / Case
3-PowerDFN
Other
Price advantage, TP65H300G4LSG is available in stock and can be delivered on the same day
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