IRFB9N65A Details _IRFB9N65A Related parameters PDF

MOSFETs - Single

The picture is for reference only

Please fill in the inquiry information for purchasing and consulting products

PartName*	Quantity*	Batch Number	Package	Manufacturer	Other requirements

Please fill in the contact details and reply to you in 3 minutes

In Stock：20,740(Ref. price)

Qty.	Unit Price	Ext. Price
No price, please contact inquiry

Qty：

Add inquiry Quick quote

Related products

Documents

Specifications

Description	Details
Series	-
Package	Tube
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	650 V
Current - Continuous Drain (Id) @ 25°C	8.5A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	10V
Rds On (Max) @ Id, Vgs	930mOhm @ 5.1A, 10V
Vgs(th) (Max) @ Id	4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	48 nC @ 10 V
Vgs (Max)	±30V
Input Capacitance (Ciss) (Max) @ Vds	1417 pF @ 25 V
FET Feature	-
Power Dissipation (Max)	167W (Tc)
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Through Hole
Supplier Device Package	TO-220AB
Package / Case	TO-220-3

Other

Price advantage, IRFB9N65A is available in stock and can be delivered on the same day

Recommended Product

Part No	Manufacturer	Product Category	Datasheet	Description	Reference price	Quantity
IRF840	Vishay Siliconix	MOSFETs - Single	Datasheet	MOSFET N-CH 500V 8A TO220AB	No price	In Stock:20398
2SK2788VYWS-E	Renesas Electronics America Inc	MOSFETs - Single	Datasheet	SMALL SIGNAL N-CHANNEL MOSFET	$0.21120	In Stock:20400
SI7682DP-T1-GE3	Vishay Siliconix	MOSFETs - Single	Datasheet	MOSFET N-CH 30V 20A PPAK SO-8	No price	In Stock:20406
PH3120L,115	Nexperia USA Inc.	MOSFETs - Single	Datasheet	POWER FIELD-EFFECT TRANSISTOR, 1	$0.245	In Stock:20408
IRFZ46ZSTRLPBF	Infineon Technologies	MOSFETs - Single	Datasheet	MOSFET N-CH 55V 51A D2PAK	$0.54880	In Stock:20418