SIHD2N80E-GE3 Details _SIHD2N80E-GE3 Related parameters PDF

MOSFETs - Single

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Specifications

Description	Details
Series	E
Package	Cut Tape (CT)
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	800 V
Current - Continuous Drain (Id) @ 25°C	2.8A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	10V
Rds On (Max) @ Id, Vgs	2.75Ohm @ 1A, 10V
Vgs(th) (Max) @ Id	4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	19.6 nC @ 10 V
Vgs (Max)	±30V
Input Capacitance (Ciss) (Max) @ Vds	315 pF @ 100 V
FET Feature	-
Power Dissipation (Max)	62.5W (Tc)
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	D-PAK (TO-252AA)
Package / Case	TO-252-3, DPak (2 Leads + Tab), SC-63

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