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MOSFETs - Single
IPB80N06S2LH5ATMA4 Picture

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IPB80N06S2LH5ATMA4

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In Stock:12,266(Ref. price)
Qty.Unit PriceExt. Price
1
$1.47840
$1.47840
Documents
Specifications
DescriptionDetails
Series
Automotive, AEC-Q101, OptiMOS™
Package
Bulk
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
55 V
Current - Continuous Drain (Id) @ 25°C
80A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
-
Rds On (Max) @ Id, Vgs
4.7mOhm @ 80A, 10V
Vgs(th) (Max) @ Id
2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
190 nC @ 10 V
Vgs (Max)
±20V
Input Capacitance (Ciss) (Max) @ Vds
5000 pF @ 25 V
FET Feature
-
Power Dissipation (Max)
300W (Tc)
Operating Temperature
-55°C ~ 175°C (TJ)
Mounting Type
Surface Mount
Supplier Device Package
PG-TO263-3-2
Package / Case
TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Other
Price advantage, IPB80N06S2LH5ATMA4 is available in stock and can be delivered on the same day
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